发明名称 |
High-frequency device |
摘要 |
A high-frequency device comprises a dielectric substrate, a filter element which has a plurality of resonating elements made of a first superconductor film on the dielectric substrate, a dielectric plate which faces the dielectric substrate substantially in parallel with the substrate and covers the plurality of resonating elements, and a spacing adjusting member configured to control the spacing between the dielectric plate and the dielectric substrate. The high-frequency device enables the pass-band frequency of the filter to be adjusted with high accuracy without variations in the skirt characteristic or ripple characteristic.
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申请公布号 |
US2002050872(A1) |
申请公布日期 |
2002.05.02 |
申请号 |
US20010983891 |
申请日期 |
2001.10.26 |
申请人 |
TERASHIMA YOSHIAKI;AIGA FUMIHIKO;YAMAZAKI MUTSUKI;FUKE HIROYUKI;KAYANO HIROYUKI;KATOH RIICHI |
发明人 |
TERASHIMA YOSHIAKI;AIGA FUMIHIKO;YAMAZAKI MUTSUKI;FUKE HIROYUKI;KAYANO HIROYUKI;KATOH RIICHI |
分类号 |
H01P1/203;(IPC1-7):H01P1/203;H01B12/02 |
主分类号 |
H01P1/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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