发明名称 High-frequency device
摘要 A high-frequency device comprises a dielectric substrate, a filter element which has a plurality of resonating elements made of a first superconductor film on the dielectric substrate, a dielectric plate which faces the dielectric substrate substantially in parallel with the substrate and covers the plurality of resonating elements, and a spacing adjusting member configured to control the spacing between the dielectric plate and the dielectric substrate. The high-frequency device enables the pass-band frequency of the filter to be adjusted with high accuracy without variations in the skirt characteristic or ripple characteristic.
申请公布号 US2002050872(A1) 申请公布日期 2002.05.02
申请号 US20010983891 申请日期 2001.10.26
申请人 TERASHIMA YOSHIAKI;AIGA FUMIHIKO;YAMAZAKI MUTSUKI;FUKE HIROYUKI;KAYANO HIROYUKI;KATOH RIICHI 发明人 TERASHIMA YOSHIAKI;AIGA FUMIHIKO;YAMAZAKI MUTSUKI;FUKE HIROYUKI;KAYANO HIROYUKI;KATOH RIICHI
分类号 H01P1/203;(IPC1-7):H01P1/203;H01B12/02 主分类号 H01P1/203
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