发明名称 |
3-5 Group compound semiconductor and light-emitting element |
摘要 |
Provided is a 3-5 group compound semiconductor comprising a GaAs substrate, a buffer layer on said GaAs substrate and an epitaxial crystal layer on said buffer layer, and the dislocation density in the epitaxial crystal layer on said buffer layer is 2000/cm2 or less. The properties and reliability of an electronic device or optical device can be remarkably improved.
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申请公布号 |
US2002050595(A1) |
申请公布日期 |
2002.05.02 |
申请号 |
US20010977375 |
申请日期 |
2001.10.16 |
申请人 |
ONO YOSHINOBU;HATA MASAHIKO;TANI TAKESHI |
发明人 |
ONO YOSHINOBU;HATA MASAHIKO;TANI TAKESHI |
分类号 |
H01L33/30;(IPC1-7):H01L33/00;H01L31/12;H01L27/15 |
主分类号 |
H01L33/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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