发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
In a process for manufacturing a semiconductor device, a film to be worked formed over a wafer is flattened by a treatment for changing the shape of this film before it is worked. A treatment for changing the shape of the film to be worked is exemplified by sheet-fed wet etching. In consideration of the compatibility of the film to be etched with a working means, the film to be etched is, for example, wet-etched so that a part of poor compatibility may be cancelled, thereby improving in advance the in-plane distribution of the film to be worked.
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申请公布号 |
WO0235594(A1) |
申请公布日期 |
2002.05.02 |
申请号 |
WO2001JP09408 |
申请日期 |
2001.10.25 |
申请人 |
SONY CORPORATION;SEZ JAPAN, INC.;IWAMOTO, HAYATO;KINOSHITA, KEI |
发明人 |
IWAMOTO, HAYATO;KINOSHITA, KEI |
分类号 |
H01L21/76;H01L21/306;H01L21/3105;H01L21/311;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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