发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 In a process for manufacturing a semiconductor device, a film to be worked formed over a wafer is flattened by a treatment for changing the shape of this film before it is worked. A treatment for changing the shape of the film to be worked is exemplified by sheet-fed wet etching. In consideration of the compatibility of the film to be etched with a working means, the film to be etched is, for example, wet-etched so that a part of poor compatibility may be cancelled, thereby improving in advance the in-plane distribution of the film to be worked.
申请公布号 WO0235594(A1) 申请公布日期 2002.05.02
申请号 WO2001JP09408 申请日期 2001.10.25
申请人 SONY CORPORATION;SEZ JAPAN, INC.;IWAMOTO, HAYATO;KINOSHITA, KEI 发明人 IWAMOTO, HAYATO;KINOSHITA, KEI
分类号 H01L21/76;H01L21/306;H01L21/3105;H01L21/311;(IPC1-7):H01L21/304 主分类号 H01L21/76
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