| 摘要 |
The invention provides for a method of forming a GaN-based compound semiconductor having excellent crystallinity and a GaN-based semiconductor device produced therefrom. A discrete SiN buffer body is formed on a substrate, and a GaN buffer layer is formed thereon at low temperatures and a GaN semiconductor layer is then formed at high temperatures. By forming the discrete SiN buffer body, the crystal growth, which is dependent on the substrate, of the low-temperature buffer layer is inhibited and monocrystallization is promoted to generate seed crystals used at the time of growing the GaN buffer layer. Further, by forming siO2 discretely between the substrate and the SiN buffer body or by forming InGaN or a superlattice layer on the GaN semiconductor layer, distortion of the GaN semiconductor layer is reduced. <IMAGE> |
