| 摘要 |
PURPOSE: A method for fabricating a guard ring of a fuse box using a plug poly is provided to improve the characteristic of the guard ring by using a plug poly as a landing pad of a guard ring metal contact of the fuse box. CONSTITUTION: An active region and a field oxide layer region(130) are formed on a semiconductor substrate(10). A polysilicon, a tungsten silicide, a capping polysilicon, a mask oxide, and an arc nitride are deposited sequentially thereon. The first poly(20) and a mask oxide layer(30) are formed by performing an etch process. A spacer oxide is deposited on the mask oxide layer(30). A spacer(40) is formed by etching the spacer oxide. A plug poly(140) is formed on a whole surface of the above structure. The first BPSG(50), the second BPSG(60), and the third BPSG(70) are deposited sequentially on the plug poly(140). The first metal contact(150) is formed by etching partially the third, the second, and the first BPSGs(70,60,50). The first metal(90) is formed thereon. An IMD layer(100) and the second metal contact(95) are formed on the first metal(90). The second metal(98) is formed thereon. A protective layer(110) and a PIX layer(120) are formed on the second metal(98).
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