REFLECTION TYPE AND SEMI-TRANSMISSION TYPE LCD STRUCTURES

摘要

PURPOSE: A reflection type and a semi-transmission type LCDs are provided to produce a reflection type and a semi-transmission type LCD structures having no storage contact hole. CONSTITUTION: A reflection type LCD structure is constructed of a plurality of gate lines(402), a plurality of data lines(405), a thin film transistor, an upper electrode(405c) of a storage capacitor, and a reflection electrode. The gate lines intersect the data lines, to define pixel regions. The thin film transistor is formed at each of intersections of the gate lines and data lines. The upper electrode of the storage capacitor is formed, being integrated with the drain electrode of the thin film transistor, and placed on a neighboring gate line. The reflection electrode is connected to the drain electrode and formed at the pixel regions.