IMPLANTED HIDDEN INTERCONNECTIONS IN A SEMICONDUCTOR DEVICE FOR PREVENTING REVERSE ENGINEERING
摘要
A camouflaged interconnection for interconnecting two spaced-apart implanted regions of a common conductivity type in an integrated circuit or device and a method of forming same. The camouflaged interconnection comprises a first implanted region forming a conducting channel between the two spaced-apart implanted regions, the conducting channel being of the same common conductivity type and bridging a region between the two spaced-apart regions, and a second implanted region of opposite conductivity to type, the second implanted region being disposed between the two spaced-apart implanted regions of common conductivity type and over lying the conducting channel to camouflage the conducting channel from reverse engineering.
申请公布号
WO0235608(A2)
申请公布日期
2002.05.02
申请号
WO2001US15195
申请日期
2001.05.11
申请人
HRL LABORATORIES, LLC.;CLARK, WILLIAM, M., JR.;BAUKUS, JAMES, P.;CHOW, LAP-WAI
发明人
CLARK, WILLIAM, M., JR.;BAUKUS, JAMES, P.;CHOW, LAP-WAI