发明名称 |
Metal oxide semiconductor heterostructure field effect transistor |
摘要 |
A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.
|
申请公布号 |
US2002052076(A1) |
申请公布日期 |
2002.05.02 |
申请号 |
US20010966559 |
申请日期 |
2001.09.27 |
申请人 |
KHAN MUHAMMAD ASIF;GASKA REMIGILUS;SHUR MICHAEL;YANG JINWEI |
发明人 |
KHAN MUHAMMAD ASIF;GASKA REMIGILUS;SHUR MICHAEL;YANG JINWEI |
分类号 |
H01L29/20;H01L29/778;H01L29/78;(IPC1-7):H01L21/824 |
主分类号 |
H01L29/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|