CHEMICAL MECHANICAL PLANARIZATION OF METAL SUBSTRATES

摘要

A method of polishing a wafer in a carrier with a polishing pad by controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or by controlling a first polishing step with a ratio of PS to CS in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.