| 摘要 |
<p>A production method of a semiconductor device and a production system of a semiconductor device, capable of restricting variations in line width caused by coarseness/denseness dependency of a line width within one chip and forming fine patterns in a semiconductor chip with a high-precision. Based on the correlation between the density of a pattern line width formed by an etching process and variations in its line width, or the correlation between the density of a resist pattern line width formed by a photolithography process and variations in its line width, a host computer functioning as an NA adjusting device adjusts the NA of a lens system in an exposure system so as to reduce variations in pattern line width or variations in resist pattern line width.</p> |
