VERFAHREN ZUR HERSTELLUNG FEHLERFREIER SILIZIUMKRISTALLE VON WILLKÜRLICHEM GROSSEN DURCHMESSER

摘要

A process for growing single crystal silicon ingots of which portions are substantially free of agglomerated intrinsic point defects. An ingot is grown generally in accordance with the Czochralski method. A first portion of the ingot cools to a temperature which is less than a temperature TA at which agglomeration of intrinsic point defects in the ingot occurs during the time the ingot is being grown, while a second portion remains at a temperature above TA. The second portion of the ingot is subsequently maintained at a temperature above TA to produce a portion which is substantially free of agglomerated intrinsic point defects.