| 发明名称 |
Semiconductor module and method of manufacturing the same |
| 摘要 |
A first metal film 14 made of a Cu plated film is formed on a radiation substrate 13A made of Al, and an island 15 exposed from a back surface of a semiconductor device 10 is adhered thereto. At that time, the back surface of the semiconductor device 10 is brought into contact with contact areas, and a first opening portion OP is opened larger than an arranging area of the semiconductor device 10. Accordingly, the cleaning can be executed via the first opening portion OP exposed from peripheries of the semiconductor device 10. In addition, the heat generated from semiconductor elements 16 can be radiated excellently from the island 15 via a second supporting member 13A.
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| 申请公布号 |
US2002050397(A1) |
申请公布日期 |
2002.05.02 |
| 申请号 |
US20010810151 |
申请日期 |
2001.03.16 |
| 申请人 |
SAKAMOTO NORIAKI;KOBAYASHI YOSHIYUKI;SAKAMOTO JUNJI;OKADA YUKIO;IGARASHI YUSUKE;MAEHARA EIJU;TAKAHASHI KOUJI |
发明人 |
SAKAMOTO NORIAKI;KOBAYASHI YOSHIYUKI;SAKAMOTO JUNJI;OKADA YUKIO;IGARASHI YUSUKE;MAEHARA EIJU;TAKAHASHI KOUJI |
| 分类号 |
H01L23/12;H01L21/48;H01L21/60;H01L23/29;H01L23/36;H01L23/40;H01L23/433;H05K1/02;H05K1/18;H05K3/26;H05K3/28;H05K3/30;(IPC1-7):H05K1/14 |
主分类号 |
H01L23/12 |
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