发明名称 Electric charge generating semiconductor substrate bump forming device, method of removing electric charge from electric charge generating semiconductor substrate, device for removing electric charge from electric charge generating semiconductor substrate, and electric charge generating semiconductor substrate
摘要 <p>The present invention provides a bump forming apparatus (101, 501) which can prevent charge appearance semiconductor substrates (201, 202) from pyroelectric breakdown and physical failures, a method carried out by the bump forming apparatus for removing charge of charge appearance semiconductor substrates, a charge removing unit for charge appearance semiconductor substrates, and a charge appearance semiconductor substrate. At least when the wafer is cooled after the bump bonding to the wafer, electric charge accumulated to the wafer (202) because of the cooling is removed through direct contact with a post-forming bumps heating device (170), or the charge is removed by a decrease in temperature control that charge can be removed in a noncontact state. Therefore an amount of charge of the wafer can be reduced in comparison with the conventional art, so that the wafer is prevented from pyroelectric breakdown and damage such as a break or the like to the wafer itself. &lt;IMAGE&gt;</p>
申请公布号 EP1202336(A1) 申请公布日期 2002.05.02
申请号 EP20000942389 申请日期 2000.06.29
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NARITA, SHORIKI;TSUBOI, YASUTAKA;IKEYA, MASAHIKO;MAE, TAKAHARU;KANAYAMA, SHINJI
分类号 H01L21/00;(IPC1-7):H01L21/60;H01L41/22 主分类号 H01L21/00
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