Improvements in or relating to fuse and antifuse link structures for integrated circuits

摘要

A fuse and antifuse link structure, which when used with a memory integrated circuit device such as a gate array or programmable read-only memory (PROM), allows the memory circuit to be reprogrammed. The fuse and antifuse link structure is comprised of a number of sublinks, each having a fuse 12 and an antifuse 16, connected in series or parallel. One element of a sublink can be programmed initially, and the other can be programmed in a second step, to reverse the first programming. Sublinks consisting of fuses and antifuses connected in series are connected in parallel and sublinks consisting of fuses and antifuses connected in parallel are connected in series in order to provide multiple reprogramming capability. <IMAGE>