发明名称 Semiconductor substrate, method of manufacturing the same, and bonded substrate stack surface shape measuring method
摘要 <p>A semiconductor substrate having a managed surface shape is manufactured. In a method of manufacturing a semiconductor substrate by bonding a device substrate (1) to a handle substrate (5), the surface shape of the handle substrate on the bonding side is nearly equal to that of the resultant semiconductor substrate. In a surface shape measuring method for a bonded substrate stack manufactured by bonding a first substrate and a second substrate via an insulating layer, a pseudo bonded substrate stack is manufactured by bonding the first and second substrates without sandwiching any insulating layer, the surface shape of the pseudo bonded substrate stack is measured, and the measurement value is regarded as the surface shape of the bonded substrate stack. &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt; &lt;IMAGE&gt;</p>
申请公布号 EP1202339(A2) 申请公布日期 2002.05.02
申请号 EP20010309005 申请日期 2001.10.24
申请人 CANON KABUSHIKI KAISHA 发明人 SAKAGUCHI, KIYOFUMI
分类号 H01L27/12;H01L21/02;H01L21/68;H01L21/762;(IPC1-7):H01L21/762 主分类号 H01L27/12
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