DRAM BIT LINE CONTACT AND METHOD OF FORMING SUCH A CONTACT

摘要

A method of forming a capacitor opening (32) is described, the method comprising the following steps: forming an electrically conductive layer (90) over an insulating material layer (28); and forming a capacitor opening through the electrically conductive layer and into the insulating material layer. After forming the capacitor opening, the electrically conductive layer is removed from over the insulating material layer. The electrically conductive layer is polished to remove the electrically conductive layer from over the insulating material layer. A bit line contact opening (34) is formed within the insulating material layer, the electrically conductive layer within the bit line contact opening ultimately forming a bit line plug (90).