发明名称 USING DEUTERATED SOURCE GASES TO FABRICATE LOW LOSS GERMANIUM-DOPED SILICON OXY NITRIDE (GESTION-SION)
摘要 <p>The present invention provides a method of manufacturing optical devices which includes the steps of providing a substrate and forming at least one optical layer on the substrate. The optical layer is formed by a CVD process which includes a deuterated source gas. The present invention also provides an optical device which includes a substrate and an optical layer including deuterium.</p>
申请公布号 WO2002035265(A2) 申请公布日期 2002.05.02
申请号 US2001042290 申请日期 2001.09.25
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