| 摘要 |
PURPOSE: A method for improving characteristics of a ruthenium(Ru) electrode is provided to improve a roughness of the ruthenium electrode by pre-treatment using a plasma. CONSTITUTION: A substrate(1) is performed by pre-treatment using a plasma. Then, a ruthenium thin film(2) is deposited on the substrate(1). The pre-treatment of the substrate(1) is performed under the pressure of 0.1-10 Torr using O2, N2, Ar, Cl2, N2O, H2 or NH3 as a source gas of the plasma. The ruthenium thin film(2) is deposited by PVD(Physical Vapor Deposition). The source of the ruthenium thin film is used as Ru(Cp)2, Ru(EtCp)2, Ru(MeCp)2, Ru(Od)3, Ru3(CO)12, or Ru-acetylacetonate(Ru-AA).
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