| 摘要 |
PURPOSE: A method for fabricating an SOC(System On Chip) device is provided to improve the characteristic of a capacitor by using the capacitor having an MIM(Metal-Insulator-Metal) structure. CONSTITUTION: A multitude of junction portions(13) and a multitude of word lines(14) are formed simultaneously on a logic device region(L) and a cell region(DC) and a peripheral region(DP) of a DRAM device region(D). A bit line(16) is formed on the cell region(DC). The first metal line(19) is formed on the logic device region(L). The first metal line(19) is formed on the logic device region(L) and the peripheral region(DP). A capacitor contact plug(18) is formed on the cell region(DC). The second metal line(21) is formed on the logic device region(L) and the peripheral region(DP). A capacitor(29,30,31) connected with the capacitor contact plug(18) is formed thereon. The third metal line(33) and a protective layer(34) are formed sequentially thereon.
|
