发明名称 |
MOS transistor having an offset region |
摘要 |
A semiconductor device comprises a semiconductor region of a first conductivity type, a drain region of the first conductivity type, an offset region of the first conductivity type, a body region of the second conductivity type, a source region of the first conductivity, a gate insulating film and a gate electrode. The drain region is provided in a surface of the semiconductor region and is shaped like a stripe. The offset region is provided in the surface of the semiconductor region and surrounds the drain region. The body region is provided in the surface of the semiconductor region and surrounds the offset region. The source region is provided in a surface of the body region and surrounds the offset region. The gate insulating film is provided on a part of the body region. The gate electrode is provided on the gate insulating film.
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申请公布号 |
US2002050619(A1) |
申请公布日期 |
2002.05.02 |
申请号 |
US20010956015 |
申请日期 |
2001.09.20 |
申请人 |
KAWAGUCHI YUSUKE;NAKAMURA KAZUTOSHI;NAKAGAWA AKIO |
发明人 |
KAWAGUCHI YUSUKE;NAKAMURA KAZUTOSHI;NAKAGAWA AKIO |
分类号 |
H01L21/336;H01L27/088;H01L29/06;H01L29/08;H01L29/423;H01L29/78;(IPC1-7):H01L31/119;H01L31/113;H01L29/76;H01L29/94 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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