发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>In a process for manufacturing a semiconductor device, a film to be worked formed over a wafer is flattened by a treatment for changing the shape of this film before it is worked. A treatment for changing the shape of the film to be worked is exemplified by sheet-fed wet etching. In consideration of the compatibility of the film to be etched with a working means, the film to be etched is, for example, wet-etched so that a part of poor compatibility may be cancelled, thereby improving in advance the in-plane distribution of the film to be worked.</p>
申请公布号 WO2002035594(P1) 申请公布日期 2002.05.02
申请号 JP2001009408 申请日期 2001.10.25
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