FIELD EFFECT TRANSISTOR(FET) TRANSISTOR AND ITS FABRICATION METHOD, AND DOUBLE GATED SILICON-ON-INSULATOR(SOI) MOSFET AND ITS FABRICATION METHOD

摘要

PURPOSE: A field effect transistor(FET) transistor and its fabrication method, and a double gated silicon-on-insulator(SOI) MOSFET and its fabrication method are provided to increase current drive per layout width and provide low out conductance. CONSTITUTION: A method of forming a field effect transistor(FET) transistor comprises the steps of forming silicon layers on a substrate. Next, epitaxial channels are formed on a side surface of the silicon layers, with one side wall of the channels therefore being exposed. The silicon layers are then removed, thereby exposing a second sidewall of the epitaxial channels. Source and drain regions are then formed, coupled to ends of the epitaxial channels. Finally, a gate is formed over the epitaxial channels.