| 摘要 |
PURPOSE: A method for forming a film is provided to have a low relative dielectric constant, high thermal stability, high humidity-resistance and high adhesive strength. CONSTITUTION: A method for forming a film on a semiconductor substrate by using the plasma CVD apparatus comprises a step of introducing a material gas to the reaction chamber(6) of the plasma CVD device(1), a step of introducing an additive/carrier gas, whose flow is substantially reduced, into the reaction chamber(6) and also a step of forming a film on a semiconductor substrate by plasma reaction wherein mixed gases, made from the material gas and the carrier gas, are used as a reaction gas.
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