| 摘要 |
PURPOSE: A semiconductor opto-electric device is provided to be capable of detecting the intensity of an incident light and identifying optical signals according the wavelength of the incident light without noises. CONSTITUTION: The first impurity region(21) is formed in a semiconductor substrate(20). The second impurity region(22) is formed in the first impurity region. A thin film(23) having photoelectric effect is formed on the surface of the second impurity region. At this time, the thin film(23) is composed of Ag-O-Cs or Sb-Cs compound. The first conductive layer(24) for applying voltage into the first impurity region is formed on the first impurity region, and the second conductive layer(25) for applying voltage into the second impurity region is formed on the second impurity region. A passivation layer(26) is formed on the resultant structure. A window(27) is formed by selectively removing the passivation layer and filling a material. An anti-reflective layer(28) is formed on the window.
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