发明名称 Method of making high definition chevron type MR sensor
摘要 A method is provided for making a well-defined, highly-predictable chevron type MR sensor for a read head. A first material is selected for a first gap layer. A selected second material is deposited on the first gap layer followed by a resist frame that has elongated openings exposing elongated top portions of the first gap layer that extend at an acute angle to a head surface of the read head. A selected reactive ion etch (RIE) is employed to etch away the exposed portions of the second material layer down to the first material of the first gap layer. The material of the second material layer is chosen to be etched by the RIE while the material of the first gap layer is chosen not to be etched by the RIE. An example is Al2O3 for the first gap layer, SiO2 for the second material layer and a RIE that is fluorine based. The resist frame is removed leaving elongated strips of the second material layer extending at the aforementioned angle to the head surface. MR material is then sputtered on top of the first gap layer and on the second material strips building up a MR sensor which has a ribbed structure on each of its first and second surfaces. The resultant MR head has second material strips sandwiched between the first gap layer and the MR sensor.
申请公布号 US6379570(B1) 申请公布日期 2002.04.30
申请号 US19990450092 申请日期 1999.11.29
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FATULA, JR. JOSEPH JOHN;HSIAO RICHARD;INOUYE CAROL YOSHIKO;LEE LI-CHUNG
分类号 G11B5/008;G11B5/31;G11B5/39;G11B5/48;G11B5/55;G11B5/584;(IPC1-7):B44C1/22;G11B5/33 主分类号 G11B5/008
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