| 摘要 |
A semiconductor light emitting device has a transparent substrate, an n-type semiconductor layer, a p-type semiconductor layer, an n-type transparent electrode, a p-type transparent electrode, an n-type bonding pad, and a p-type bonding pad. The n-type semiconductor layer is disposed over the transparent substrate. The p-type semiconductor layer and the n-type transparent electrode are provided on the n-type semiconductor layer and arranged alternatively to each other, where the p-type semiconductor layer and the n-type transparent electrode cover different portions of the n-type semiconductor layer respectively. The p-type transparent electrode is provided in contact with the p-type semiconductor layer. The n-type and p-type bonding pads are disposed on the n-type and p-type transparent electrodes respectively, and the areas of these bonding pads are smaller than the area of the corresponding electrodes.
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