发明名称 Heat treatment apparatus and substrate processing system
摘要 The heat treatment apparatus of the present invention comprises a chamber, a hot plate for supporting and heating a substrate in a chamber, a gas supply mechanism having a single or a plurality of gas blow-out ports and arranged in an upper space above the hot plate in the chamber, for supplying a gas along the substrate so as to cover the substrate placed on the hot plate, and an exhaust mechanism having a single or a plurality of gas converge/exhaust ports which face the gas blow-out ports with the hot plate interposed therebetween, for converging and exhausting the gas blown out from the gas blow-out ports, from the chamber, the gas converge/exhaust ports having an effective exhaustion opening length L2 which is shorter than an effective blow-out opening length L1.
申请公布号 US6380518(B2) 申请公布日期 2002.04.30
申请号 US20010921139 申请日期 2001.08.03
申请人 TOKYO ELECTRON LIMITED 发明人 SHIRAKAWA EIICHI;SATA NOBUYUKI
分类号 G03F7/16;G03F7/40;H01L21/00;(IPC1-7):F27B5/14 主分类号 G03F7/16
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