发明名称 Etching of anti-reflective coatings
摘要 A method of removing regions of an anti-reflective coating includes etching the anti-reflective coating with a fluorinated hydrocarbon-based plasma etch and etching the anti-reflective coating with an oxygen-based plasma etch. In some implementations, the oxygen-based plasma etch is performed following the fluorinated hydrocarbon-based etch. The technique can be used to remove regions of an anti-reflective coating so that a more uniform and controlled etch of an underlayer can subsequently be performed. The disclosed technique is particularly useful for etching organic or organometallic anti-reflective layers, but can be used to etch other anti-reflective layers as well. In addition, the techniques are particularly advantageous for etching anti-reflective coatings disposed on certain oxide and nitride layers, although the underlayer can be formed of other materials as well.
申请公布号 US6379872(B1) 申请公布日期 2002.04.30
申请号 US19980141376 申请日期 1998.08.27
申请人 MICRON TECHNOLOGY, INC. 发明人 HINEMAN MAX;HOWARD BRAD
分类号 H01L21/311;(IPC1-7):G03C5/00 主分类号 H01L21/311
代理机构 代理人
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