发明名称 |
Semiconductor with laterally non-uniform channel doping profile and manufacturing method therefor |
摘要 |
An ultra-large scale integrated circuit semiconductor device having a laterally non-uniform channel doping profile is manufactured by using a Group IV element implant at an implant angle of between 0° to 60° from the vertical to create interstitials in a doped silicon substrate under the gate of the semiconductor device. After creation of the interstitials, a channel doping implantation is performed using a Group III or Group V element which is also implanted at an implant angle of between 0° to 60° from the vertical. A rapid thermal anneal is then used to drive the dopant laterally into the channel of the semiconductor device by transient enhanced diffusion.
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申请公布号 |
US6380041(B1) |
申请公布日期 |
2002.04.30 |
申请号 |
US20000686476 |
申请日期 |
2000.10.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
YEAP GEOFFREY CHOH-FEI;MILIC OGNJEN;NG CHE-HOO |
分类号 |
H01L21/265;H01L29/10;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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地址 |
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