| 摘要 |
PROBLEM TO BE SOLVED: To obtain a gallium nitride based semiconductor light emitting element represented by a specified formula having low operating current and voltage by decreasing the band gap of a first p-type layer toward a second p-type layer and setting it equal to or larger than the band gap at the interface of first and a second p-type layers. SOLUTION: The gallium nitride based semiconductor light emitting element has a layer structure sandwiching a p-type layer and an n-type layer represented by a general formula InxAlyGa1-x-yN (0<=x<=1, 0<=y<=1, 0<=x+y<=1). A p-type AlGaN layer 8 has six layer structure of p-type Al0.19Ga0.81N, and the like, (14-19) sequentially from the side of interface to an active layer 7 and has total thickness of 200 Å. The p-type Al0.19Ga0.81N layer 14 has large Al composition so that it has a large conduction band barrier. The p-type AlGaN layer 14-19 has Al composition decreasing toward a o-type GaN optical guide layer 9 and the valence band discontinuity at each interface is suppressed to be small. |
