发明名称 |
Planarization process with abrasive polishing slurry that is selective to a planarized surface |
摘要 |
Parameters of an improved planarization process for a semiconductor structure surface are optimized to cause a height reduction rate of the surface that adjusts downward by a factor of at least three once the surface becomes substantially planarized. Localized over-polishing is substantially eliminated by the acquired selectivity of the planarization process to planarized surfaces. One embodiment of the improved planarization process comprises the use of a polishing slurry including a plurality of abrasive particles of a size selected that the polishing of a surface having a height causes a surface height reduction rate that drops once the surface becomes planarized. Preferred abrasive particle sizes are about 50 nm in mean diameter or less.
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申请公布号 |
US6379225(B1) |
申请公布日期 |
2002.04.30 |
申请号 |
US20000569921 |
申请日期 |
2000.05.11 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ROBINSON KARL M.;HUDSON GUY;MEIKLE SCOTT |
分类号 |
B24B37/04;C09G1/02;C09K3/14;H01L21/3105;H01L21/321;(IPC1-7):B24B1/00 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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