发明名称
摘要 An anti-noise circuit dissipates parasitic tank circuit energy which causes ground undershoot and Vcc overshoot in the power rails (PG,PV) of an integrated circuit device. An anti-noise circuit transistor element, either an anti-undershoot circuit transistor element (AUCT) or an anti-overshoot circuit transistor element (AOCT) incorporates selected resistance in its primary current path for providing dissipating resistance. The anti-noise circuit couples a current source (PV), the anti-noise circuit transistor element (AUCT,AOCT) with dissipating resistance, and power rail parasitic lead inductance in series in a sacrificial current path. A control circuit coupled to the control node of the anti-noise circuit transistor element (AUCT,AOCT) causes sacrificial current flow following switching of potential levels at the output for dissipating parasitic tank circuit energy. The control circuit incorporates an active pullup and pulldown passgate (RST1,ICT1,OCT1) (RST2,ICT3,OCT2) between the data input (VIN) and the control node of the anti-noise circuit transistor element. The passgate includes a pullup passgate transistor element (RST1,ICT3) and a pulldown passgate transistor element (ICT1,RST2) coupled for active turn off of the anti-noise circuit transistor element following a switching of potential levels at the data input (VIN). <IMAGE>
申请公布号 JP3279607(B2) 申请公布日期 2002.04.30
申请号 JP19910300883 申请日期 1991.11.16
申请人 发明人
分类号 H03K17/04;H03K17/16;H03K17/687;H03K19/003;H03K19/0175 主分类号 H03K17/04
代理机构 代理人
主权项
地址