发明名称 |
Method to form an embedded flash memory circuit with reduced process steps |
摘要 |
A method to form an embedded FLASH integrated circuit with reduced processing steps is described. In the method a partial etch is performed on the control gate region of a polycrystalline silicon film (21). A multiple etch process is then used to simultaneously form the FLASH memory cell gate stack (54), the NMOS gate structure (94) and the PMOS gate structure (96).
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申请公布号 |
US6380031(B1) |
申请公布日期 |
2002.04.30 |
申请号 |
US20000637090 |
申请日期 |
2000.08.10 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MEHRAD FREIDOON;XIA JIE;ZHENG SANDRA;TSUNG LANCY |
分类号 |
H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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