摘要 |
Integrated circuitry for use with an ultrasound transducer of an ultrasound imaging system is disclosed. According to one embodiment of the invention, unique transducer circuitry comprises a low-voltage circuit and a high-voltage circuit including at least one high-voltage FET to drive an ultrasound transducer element. The low-voltage circuit and the high-voltage circuit are monolithically formed on a single substrate. The low-voltage circuit may include high density digital logic circuitry to generate transmit signals to the transducer element, as well as low noise analog receive circuitry to process signals received from the transducer element. The high-voltage FET of the high-voltage circuit comprises a lightly-doped drain region to increase the breakdown voltage of the high-voltage FET. The low and high-voltage circuits may be fabricated together on a single substrate using conventional low-voltage CMOS processing techniques.
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