| 摘要 |
A method for producing a semiconductor device comprising the steps of:(A) forming a gate insulating layer on a surface of a semi-conductive layer, and then, forming a gate electrode on a gate insulating layer; (B) introducing an impurity in regions of the semi-conductive layer where source/drain regions are to be formed, and then, carrying out heat treatment for activation of the introduced impurity, to form source/drain regions in the semi-conductive layer, and (C) introducing an impurity into at least regions of the semi-conductive layer where extension regions are to be formed, and then, carrying out heat treatment for activation of the introduced impurity, to form extension regions in the semi-conductive layer.
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