| 摘要 |
A method of operating a high sensitivity active pixel for use in metal oxide semiconductor (MOS) image sensor circuits. Light is allowed to be incident upon a photodetector circuit to thereby generate an input signal that represents the light. The input signal is applied to a gate of a first field effect transistor (FET). A control signal is applied to a drain of the FET and thereby generates an output current at a source of the FET. Charge is accumulated in a capacitor that is coupled to the source of the FET, where a voltage across the capacitor represents the detected incident light.
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