| 摘要 |
PROBLEM TO BE SOLVED: To fabricate a nitride semiconductor light emitting element in which contact resistance is decreased and low voltage operation is realized by employing a p-type or n-type GaN1-xAsx layer or an InGaN1-xAsx layer having critical film thickness or less as the semiconductor layer of a light emitting element. SOLUTION: Although lattice mismatch as high as 14% is present between a sapphire substrate and GaN, a GaN buffer layer 102 is grown at first at low temperature and then GaN having excellent crystallinity is obtained by controlling the thickness of layer. Subsequently, TMIn is introduced and an anti-cracking n-In0.1Ga0.9N layer 104 of 100 nm thick is formed. Thereafter, a p-GaAs0.04N0.96 contact layer 112 is grown by introducing NH3, AsH3, TMGa and CP2Mg and a high quality crystal having critical film thickness or less is obtained by setting the film thickness at 15 nm. A working voltage approximate to that of an LD element on an ordinary GaAs substrate can thereby be obtained and since generation of heat is suppressed during operation, a nitride semiconductor laser operating continuously under room temperature can be realized. |
