| 发明名称 |
Thin film formed by inductively coupled plasma |
| 摘要 |
Silicon nitride is formed on a supporting substrate by chemical vapor deposition using an antenna outside a vacuum reaction chamber to apply RF power to form an inductively coupled plasma from a reactant gas.
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| 申请公布号 |
US6380612(B1) |
申请公布日期 |
2002.04.30 |
| 申请号 |
US20000517077 |
申请日期 |
2000.03.01 |
| 申请人 |
HYUNDAI DISPLAY TECHNOLOGY, INC. |
发明人 |
JANG JIN;KIM JAE-GAK;CHO SE-IL |
| 分类号 |
C23C16/50;C23C16/24;C23C16/34;C23C16/44;C23C16/507;H01J37/32;H01L21/20;H01L21/205;H01L21/31;H01L21/314;H01L21/318;H01L21/336;H01L29/786;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/50 |
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