| 摘要 |
An optical detector includes a pyramidal etch-pit formed in a layered semiconductor structure. A channel layer is provided on facets of the pyramidal etch-pit and a hole-accumulation layer, sandwiched by a pair of barrier layers is formed on the channel layer. Further, electrodes are provided on a top surface and a bottom surface of the layered semiconductor structure. An optical window is provided so as to introduce an optical beam to the channel layer or the hole-accumulation layer.
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