| 摘要 |
Metal wiring in a semiconductor device and method for fabricating the same, the metal wiring including a first interlayer insulating film having a first contact hole to a region of a semiconductor substrate, a barrier metal film on an inside surface of the first contact hole, a second interlayer insulating film having a second contact hole to the barrier metal film formed on the first interlayer insulating film, a contact plug in the first and second contact holes in contact with the barrier metal film, and a metal wiring formed on the second interlayer insulating film in contact with the contact plug, whereby permitting to form a barrier metal film under a contact hole regardless of an aspect ratio and an area of the contact hole.
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