| 发明名称 |
Manufacture method of semiconductor device with suppressed impurity diffusion from gate electrode |
| 摘要 |
A method of manufacturing a semiconductor device includes the step of forming a MOS transistor structure on a semiconductor substrate, the MOS transistor structure having an insulated gate electrode. The method further includes the step of depositing a silicon nitride film covering the insulated gate electrode over the semiconductor substrate by single wafer processing type thermal CVD at a substrate temperature of 500° to 800° C.
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| 申请公布号 |
US6380014(B1) |
申请公布日期 |
2002.04.30 |
| 申请号 |
US19990461005 |
申请日期 |
1999.12.15 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
OHTA HIROYUKI;SATOH HIDEKAZU |
| 分类号 |
H01L29/78;H01L21/31;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L21/768;H01L21/8238;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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