发明名称 |
Ridge-structure DFB semiconductor laser and method of manufacturing the same |
摘要 |
A description is provided of a ridge-structure DFB semiconductor laser and a method of manufacturing the laser wherein an optical absorption loss by a metal electrode formed on a grating can be avoided. The DFB semiconductor laser includes: a ridge protruding from flat portions of a cladding layer which is formed on an active layer, the ridge includes a cladding layer and a contact layer sequentially formed on the active layer; a plurality of metal strips having a predetermined periodicity along a longitudinal direction of the ridge and extending from a surface of at least one of the flat portions to a top of the ridge; and an insulating layer formed on the plurality of metal strips at the top of the ridge.
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申请公布号 |
US6381258(B1) |
申请公布日期 |
2002.04.30 |
申请号 |
US20000481940 |
申请日期 |
2000.01.13 |
申请人 |
PIONEER CORPORATION |
发明人 |
TAKEI KIYOSHI;CHEN NONG;WATANABE YOSHIAKI;CHIKUMA KIYOFUMI |
分类号 |
H01S5/00;H01S5/042;H01S5/12;H01S5/22;H01S5/343;(IPC1-7):H01S3/08 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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