An isotope structure formed in an indirect band gap semiconductor material,申请号AU20010095280-传众专利搜索

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发明名称	An isotope structure formed in an indirect band gap semiconductor material
摘要
申请公布号	AU9528001(A)	申请公布日期	2002.04.29
申请号	AU20010095280	申请日期	2001.10.17
申请人	SILEX SYSTEMS LIMITED	发明人	KOHEI ITOH
分类号	C30B29/68;G02F1/017;H01L29/15;H01S5/34	主分类号	C30B29/68
代理机构		代理人
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