| 摘要 |
PROBLEM TO BE SOLVED: To improve a detection/emission characteristics related to a semiconductor device which performs light detection/light emission by electron transition between different energy levels. SOLUTION: A semiconductor device is provided where light is absorbed or emitted by electron transition between different energy levels using a quantum well layer 4. The transition of electron at the quantum well layer 4 is performed at a conduction band X valley where the effective mass of electron is larger than at a conduction band Γ valley. By constituting the quantum well layer 4 with the X valley where an effective density of states is large, the intensity and coefficient of light absorption is raised for improved light detection/emission characteristics. |
