| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a storing method for enabling to increase storage capacitor of a non-volatile memory without pressing excessively requirement of read-out accuracy, complexness, and evaluation for danger. SOLUTION: A data control method is applied to a multiple level non-volatile memory device having a memory array 10 formed by plural memory cells 11. Each of the memory cell 11 stores, for example, plural bits being 3 other than integer power of 2. One data byte is stored in numbers of non-integer in the memory cell 11 in this method. In this control method, data words formed by plural byte are stored in the same clock cycle by programming the number previously decided of the adjacent memory cell 11. Read-out is programmed by reading out a stored data word in the same clock cycle.</p> |
