发明名称 |
PREPARATION METHOD AND APPARATUS FOR SEMICONDUCTOR SAMPLE |
摘要 |
<p>PROBLEM TO BE SOLVED: To realize highly sensitive element analysis of impurities of a semiconductor material with a PIXE. SOLUTION: The semiconductor material 20 is made to react with an etching liquid 22 containing hydrofluoric nitrate. The recovered etching liquid 28 is evaporated to the dryness and base material elements are evaporated to be removed thereby making a PIXE sample.</p> |
申请公布号 |
JP2002122522(A) |
申请公布日期 |
2002.04.26 |
申请号 |
JP20000315467 |
申请日期 |
2000.10.16 |
申请人 |
SUMITOMO HEAVY IND LTD;SUMIJU SHIKEN KENSA KK |
发明人 |
HIROSE MASAFUMI;NAGANO AKIRA |
分类号 |
G01N23/225;G01N1/28;G01N33/00;H01L21/66;(IPC1-7):G01N1/28 |
主分类号 |
G01N23/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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