| 摘要 |
PURPOSE: Provided is a positive photosensitive composition which can ensure high resolution and improved exposure margin in photolithography utilizing a light source for short-wavelength exposure enabling super minute patterning and a chemical-amplification positive resist. CONSTITUTION: The positive photosensitive composition comprises (A) a compound capable of generating a sulfonic acid represented by formula(X) upon irradiation with one of an actinic ray and radiation; and (B) a resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer. In the formula(X), R1a to R13a groups each represents a hydrogen atom, an alkyl group, a haloalkyl group, a halogen atom or a hydroxyl group; A1 and A2, which are the same or different, each represents a single bond or a hetero atom-containing divalent linkage group, provided that, when each of A1 and A2 is single bond, all of the R1a to R13a groups do not simultaneously represent a fluorine atom and all of the R1a to R13a groups do not simultaneously represent a hydrogen atom; m1 to m5, which are the same or different, each represents an integer of 0 to 12; and p represents an integer of 0 to 4.
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