GROUND VOLTAGE SUPPLY LINE STRUCTURE OF DRAM DEVICE

摘要

PURPOSE: A ground voltage supply line structure is provided to improve data retaining time of memory cells by leveling ground noise of word lines. CONSTITUTION: A plurality of sub arrays(100) are arranged in a matrix of rows and columns, and comprise a plurality of word lines, a plurality of bit lines, and a plurality of memory cells arranged in a matrix of the word lines and the bit lines, respectively. A plurality of sense amplifier regions(120) are disposed respectively between adjacent sub arrays in a column direction, and a plurality of sub-word line driver regions(140) are disposed at both sides of each sub array in a row direction. A ground voltage supply line(VssW) supplies a ground voltage for driving word lines to the sub-word line driver regions. The ground voltage supply line is arranged on sub-word line driver regions disposed in each column direction and on sense amplifier regions disposed in each row direction, so as to be crossed on regions placed between the sub-word line driver regions.