| 摘要 |
PURPOSE: Provided is a method for repairing seed layers prior to subsequent metallization during the manufacture of electronic devices. CONSTITUTION: The method of providing a metal seed layer substantially free of discontinuities disposed on a substrate comprises the step of contacting the metal seed layer disposed on the substrate with an electroplating bath including one or more sources of copper ions and an electrolyte, wherein the copper ions are present in an amount up to 10 g/L. Also, a method of manufacturing an electronic device includes the step of contacting a metal seed layer disposed on a substrate with an electroplating bath including one or more sources of copper ions and an electrolyte, wherein the copper ions are present in an amount up to 10 g/L. |
