| 摘要 |
PROBLEM TO BE SOLVED: To provide a formation method of a fine pattern that is counter tapered, and is 1 μm or less. SOLUTION: A substrate has a resist film. In a multilayer resist substrate, the resist film should be set to a counter-taper-like multilayer resist film. In the counter-taper-like multilayer resist film, at least two resist films having different remaining film sensitivity to an arbitrary developer are laminated (1), and either the resist film having the maximum remaining film sensitivity or the resist film having the minimum one is laminated closest to the substrate, and the other is laminated farthest from the substrate (2). The multilayer substrate is used for forming the counter-tapered pattern. |
